®

6

ALLIANCE SEMICONDUCTOR

10/6/00

AS6VA25616

Data retention waveform

AC test loads and waveforms

Notes

2

This parameter is sampled, but not 100% tested.

3

For test conditions, see AC Test Conditions.

5

This parameter is guaranteed, but not tested.

6WE is HIGH for read cycle.

7CS and OE are LOW for read cycle.

8

Address valid prior to or coincident with CS transition LOW.

9

All read cycle timings are referenced from the last valid address to the first transitioning address.

10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.

11 All write cycle timings are referenced from the last valid address to the first transitioning address.

12 N/A.

13 1.2V data retention applies to commercial and industrial temperature range operations.

14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.

Parameter

Symbol

Test conditions

Min

Max

Unit

CS

≥ V

1.2V

3.3

V

Data retention current

–4

mA

Chip deselect to data retention time

0–

ns

Operation recovery time

tRC

–

ns

Parameters

Unit

R1

1105

16670

15294

Ohms

R2

1550

15380

11300

Ohms

645

8000

6500

Ohms

1.75V

1.2V

0.85V

Volts

CS

Data retention mode

R1

R2

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

(a)

R1

R2

OUTPUT

5 pF

ALL INPUT PULSES

(b)

10%

90%

10%

90%

GND

< 5 ns

(c)

Thevenin equivalent:

OUTPUT

V

INCLUDING

JIG AND

SCOPE