AS6VA25616-TC datasheet(4/9 Pages) ALSC

номер детали	AS6VA25616-TC

подробное описание детали	2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

PDF	9 Pages

Scroll/Zoom	100%

производитель	ALSC [Alliance Semiconductor Corporation]

домашняя страница	https://www.alliancememory.com

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4 / 9 page

ALLIANCE SEMICONDUCTOR

10/6/00

AS6VA25616

Read cycle (over the operating range)3,9

Shaded areas indicate preliminary information.

Key to switching waveforms

Read waveform 1 (address controlled)3,6,7,9

Read waveform 2 (CS, OE, UB, LB controlled)3,6,8,9

Parameter

Symbol

Min

Max

Unit

Notes

Read cycle time

tRC

–

Address access time

tAA

–55

Chip select (CS) access time

tACS

–55

Output enable (OE) access time

tOE

–25

Output hold from address change

tOH

–

CS low t

o output in low Z

tCLZ

–

4, 5

high to output in high Z

tCHZ

020

4, 5

low to output in low Z

tOLZ

–

4, 5

UB/LB access time

tBA

–55

UB/LB low to low Z

tBLZ

–

4, 5

UB/LB high to high Z

tBHZ

020

4, 5

high to output in high Z

tOHZ

020

4, 5

Power up time

tPU

–

4, 5

Power down time

tPD

–55

4, 5

Undefined/don’t care

Falling input

Rising input

tOH

tAA

tRC

tOH

DOUT

Address

Data valid

Previous data valid

Data valid

tRC

tAA

tBLZ

tBA

tOE

tOLZ

tOH

tOHZ

tHZ

tBHZ

tACS

tLZ

Address

LB, UB

DOUT

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