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UT7430G-K08-3030-R датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали UT7430G-K08-3030-R
подробное описание детали  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT7430G-K08-3030-R датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
Electrical Characteristics：(T
C=25℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Dra i n-Source Leakage Current
VGS=0V, VDS=30V, TJ=25℃
---
---
1
μA
VGS=0V, VDS=30V, TJ=125℃
10
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1.2
1.8
2.5
V
RDS(ON)
Dra i n-Source On Resistance
3
VGS=10V,ID=10A
---
9.4
12
mΩ
VGS=4.5V,ID=5A
---
13
18
GFS
Forwa rd Tra nsconductance
VDS=10V, ID=3A
---
6.4
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=25V, VGS=0V, f=1MHz
---
620
900
pF
Coss
Output Ca pacitance
---
85
125
Crss
Reverse Tra nsfer Ca pacitance
---
60
90
Switching Characteristics
td(on)
Turn-On Delay Ti me
3.4
VDD=15V , VGS=10V ,
RG=6,ID=1A
---
3.8
7
ns
tr
Ri s e Time
3.4
---
10
19
ns
td(off)
Turn-Off Delay Ti me
3.4
---
22
42
ns
tf
Fa ll Ti me
3.4
---
6.6
13
ns
Qg
Tota l Gate Charge
3.4
---
7.4
12
nC
UT7430G-K08-3030-R



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