UT7430G-K08-3030-R datasheet(1/4 Pages) DOINGTER

номер детали	UT7430G-K08-3030-R

подробное описание детали	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.doingter.cn/

Logo

1 / 4 page

www.doingter.cn

—

1 —

Description：

This N-Channel MOSFET uses advanced trench technology

to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

Features：

1) VDS=30V,ID=35A,RDS(ON)=12mΩ@VGS=10V

2) Improved dv/dt capability

3) Fast switching

4) 100% EAS Guaranteed

5) Green Device Available.

Absolute Maximum Ratings：(T

C=25℃

unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-Continuous (TC=25℃)

35

A

Continuous Drain Current-TC=100℃

22

IDM

Drain Current – Pulsed

1

140

A

EAS

Single Pulse Avalanche Energy

2

13

mJ

PD

Power Dissipation (TC=25℃)

27

W

Power Dissipation – Derate above 25℃

0.21

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

S

S1

S

G

D

RƟJC

Thermal Resistance,Junction to Case

4.6

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

62

UT7430G-K08-3030-R

Аналогичный номер детали - UT7430G-K08-3030-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	UT7430G-K08-3030-R	213Kb / 7P	30V, 34A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

More results

Аналогичное описание - UT7430G-K08-3030-R

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

More results

UT7430G-K08-3030-R датащи(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT7430G-K08-3030-R датащи(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Аналогичный номер детали - UT7430G-K08-3030-R

Аналогичное описание - UT7430G-K08-3030-R

Html Pages

1 2 3 4

датащи скачать

ссылки URL