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DRDN005W датащи(PDF) 4 Page - Diodes Incorporated

номер детали DRDN005W
подробное описание детали  COMPLEX ARRAY FOR RELAY DRIVERS
PDF  9 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DRDN005W датащи(HTML) 4 Page - Diodes Incorporated

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DS30573 Rev. 8 - 2
4 of 9
DRD (xxxx) W
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
Vl(off)
-0.5
V
VCC = -5V, IO = -100
µA
Vl(on)
-3.0
V
VO = -0.3V, IO = -20mA
Output Voltage
VO(on)
-0.3V
V
IO/Il = -50mA/-2.5mA
Input Current
Il
-28
mA
VI = -5V
Output Current
IO(off)
-0.5
µA
VCC = -50V, VI = 0V
DC Current Gain
Gl
47
VO = -5V, IO = -50mA
Gain-Bandwidth Product
fT
200
MHz
VCE = -10V, IE = -5mA,
f = 100MHz
@ TA = 25
°C unless otherwise specified
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor
Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
Vl(off)
0.5
V
VCC = 5V, IO = 100
µA
Vl(on)
3.0
V
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
0.3V
V
IO/Il = 50mA/2.5mA
Input Current
Il
28
mA
VI = 5V
Output Current
IO(off)
0.5
µA
VCC = 50V, VI = 0V
DC Current Gain
Gl
47
VO = 5V, IO = 50mA
Gain-Bandwidth Product
fT
200
MHz
VCE = 10V, IE = 5mA,
f = 100MHz
@ TA = 25
°C unless otherwise specified
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
Vl(off)
-0.3
V
VCC = -5V, IO = -100
µA
Vl(on)
-2.0
V
VO = -0.3V, IO = -20mA
Output Voltage
VO(on)
-0.3V
V
IO/Il = -50mA/-2.5mA
Input Current
Il
-7.2
mA
VI = -5V
Output Current
IO(off)
-0.5
µA
VCC = -50V, VI = 0V
DC Current Gain
Gl
56
VO = -5V, IO = -50mA
Gain-Bandwidth Product
fT
200
MHz
VCE = -10V, IE = -5mA,
f = 100MHz
@ TA = 25
°C unless otherwise specified
Electrical Characteristics, Switching Diode @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 4)
V(BR)R
75
IR = 10
µA
Forward Voltage (Note 4)
VF
0.62
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 4)
IR
2.5
50
30
25
µA
µA
µA
nA
VR = 75V
VR = 75V, Tj = 150
°C
VR = 25V, Tj = 150
°C
VR = 20V
Total Capacitance
CT
4.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
4.0
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Ω
Notes:
4. Short duration pulse test used to minimize self-heating effect.



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