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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DRDN005W датащи(PDF) 3 Page - Diodes Incorporated |
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DRDN005W датащи(HTML) 3 Page - Diodes Incorporated |
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3 / 9 page  DS30573 Rev. 8 - 2 3 of 9 DRD (xxxx) W www.diodes.com Electrical Characteristics, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition DC Current Gain hFE 150 800 IC = 100mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 300mA, IB = 30mA Collector-Base Breakdown Voltage V(BR)CBO 45 V IC = 100 µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 18 V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 100 µA, IC = 0 Collector Cutoff Current ICBO 1 µA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO 1 µA VEB = 4V, IC = 0 Current Gain-Bandwidth Product fT 100 MHz VCE = 10V, IC = 50mA, f = 100MHz Capacitance Cobo 8 pF VCB = 10V, IE = 0, f = 1MHz Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 100 µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 V IE = 100 µA, IC = 0 Collector Cutoff Current ICBO 100 nA VCB = 60V, IE = 0 VCB = 80V, IE = 0 Collector Cutoff Current ICES 100 nA VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V DC Current Gain hFE 100 IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.25 V IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 100mA, VCE = 1.0V Current Gain-Bandwidth Product fT 100 MHz VCE = 2.0V, IC = 10mA, f = 100MHz Electrical Characteristics, DRDN005W NPN Transistor @ TA = 25°C unless otherwise specified Electrical Characteristics, DRDP006W PNP Transistor @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition DC Current Gain hFE 100 300 IC = -150mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC = -150mA, IB = -15mA Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10 µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10 µA, IC = 0 Collector Cutoff Current ICBO -10 nA VCB = -50V, IE = 0 Current Gain-Bandwidth Product fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz Capacitance Cobo 8 pF VCB = -10V, IE = 0, f = 1MHz Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage Vl(off) 0.3 V VCC = 5V, IO = 100 µA Vl(on) 2.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA Input Current Il 7.2 mA VI = 5V Output Current IO(off) 0.5 µA VCC = 50V, VI = 0V DC Current Gain Gl 56 VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz VCE = 10V, IE = 5mA, f = 100MHz |
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