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TSML200 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

номер детали TSML200
подробное описание детали  Lead-free and compliant with the European Union RoHS Directive
PDF  2 Pages
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производитель  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
домашняя страница  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

TSML200 датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  TSML200 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd TSML200 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Features
Small size of 0603
Lead-free and compliant with the European Union RoHS Directive 2011/65/EU
Fast tripping resettable circuit protection
Surface mount packaging for automated assembly
Agency Recognition:
UL,CSA
Product Dimensions (mm)
A
B
C
D
E
Part number
Max.
Max.
Max.
Min.
Min.
TSML200
1.80
1.00
1.10
0.15
0.05
Electrical Characteristics
IH
IT
Vmax
Imax
Ttrip
Pd typ
Rmin
R1max
Part number
(A)
(A)
(V)
(A)
Current(A)
Time(S)
(W)
(Ω)
(Ω)
TSML200
2.00
4.00
6.0
50.0
8.0
1.0
0.5
0.012
0.065
IH=Hold current: maximum current at which the device will not trip at 25℃ still air.
IT=Trip current: minimum current at which the device will always trip at 25℃ still air.
Vmax=Maximum voltage device can withstand without damage at rated current.
Imax=Maximum fault current device can withstand without damage at rated voltage.
Ttrip=Maximum time to trip(s) at assigned current.
Pdtyp=Typical power dissipation: typical amount of power dissipated by the device when in state air environment.
Rmin=Minimum device resistance at 25℃ prior to tripping.
R1max=Maximum device resistance measured in the nontripped state 1 hour post reflow.
Thermal Derating
Maximum ambient operating temperature(℃)
LP-TSML200
-40
-20
0
20
25
40
50
60
70
85
Hold Current (A)
2.63
2.27
2.10
2.05
2.00
1.63
1.45
1.37
1.12
0.82
Trip Current (A)
5.26
4.54
4.20
4.10
4.00
3.26
2.90
2.74
2.24
1.64
TSML200
Rev :
www.leiditech.com
01.06.2015
1/2


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