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SM2001CSK датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали SM2001CSK
подробное описание детали  N-Channel and P-Channel MOSFET uses advanced trench technology
PDF  9 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SM2001CSK датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SM2001CSK Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 7Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 8Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 9Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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N-Channel Electrical Characteristics：(T
A=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
19.5
21.5
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=20V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±10V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
0.7
1.1
V
RDS(ON)
Drain-Source On Resistance
VGS=4.5V,ID=8A
---
12
17
mΩ
VGS=2.5V,ID=4A
---
17
24
GFS
Forward Transconductance
VDS=10V, ID=4A
---
10
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=8V, VGS=0V, f=1MHz
---
500
---
pF
Coss
Output Capacitance
---
295
---
Crss
Reverse Transfer Capacitance
---
96
---
Qg
Gate Charge
VGS=4.5V, VDS=10V,
ID=3A
---
10
15
nc
Qgs
Gate-Source Charge
---
2.3
---
Qgd
Gate-Drain Charge
---
2.9
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=10V, ID=3A ,
VGS=4.5V,RG=6Ω
---
11
---
ns
tr
Rise Time
---
30
---
ns
td(off)
Turn-Off Delay Time
---
35
---
ns
tf
Fall Time
---
10
---
ns
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=1A
---
---
1.2
V
IS
Continuous Source Current
2
---
---
4.5
A
---
Notes:
1.
Repetitive rating: pulse width limited by maximum junction temperature.
2.
Surface mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
SM 2001CSK



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