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SM2001CSK датащи(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали SM2001CSK
подробное описание детали  N-Channel and P-Channel MOSFET uses advanced trench technology
PDF  9 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SM2001CSK датащи(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SM2001CSK Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 7Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 8Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SM2001CSK Datasheet HTML 9Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Description：
This N-Channel and P-Channel MOSFET useadvanced trench
Tech nol ogy To provide excellent RDS(ON)，low gate charge.
This device may be usedto form a level shifted high side switch,
and for a host ofotherapplication.
Features：
N-Channel:V DS=20V,ID=6.8A,RDS(ON)<17mΩ@VGS=4.5V
P-Channel: V DS=-30V,ID=-5.1A,RDS(ON)<55@VGS=-10
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON).
4) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
A=25℃ unless otherwise noted)
Symbol
Parameter
N-Channel
P-Channel
Units
VDS
Drain-Source Voltage
20
-30
V
VGS
Gate-Source Voltage
±10
±20
V
ID
Continuous Drain Current
6.8
-5.1
A
Continuous Drain Current
1
26
-20
PD
Power Dissipation
2
2.5
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
N-CH
P-CH
Units
RƟJA
Thermal Resistance,Junction to Ambient
2
62.5
62.5
℃/W
G2
D1
D1
D2
D2
S1
G1
S2
SM 2001CSK


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