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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LCEP3090GU датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCEP3090GU датащи(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page  Description The LCEP3090GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =30V,ID =90A RDS(ON)=2mΩ (typical) @ VGS=10V RDS(ON)=3.1mΩ (typical) @ VGS=4.5V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification Schematic Diagram Top View Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP3090GU LCEP3090GU DFN5X6-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 90 A Drain Current-Continuous(TC=100 ) ℃ ID (100℃) 63.6 A Pulsed Drain Current IDM 360 A Maximum Power Dissipation PD 70 W Derating factor 0.56 W/℃ Single pulse avalanche energy (Note 5) EAS 500 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ D D D D D D D D S S S G G S S S LCE N-Channel Super Trench Power MOSFET LCEP3090GU Rev : www.leiditech.com 01.06.2018 1/5 |
Аналогичный номер детали - LCEP3090GU |
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Аналогичное описание - LCEP3090GU |
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