LCEP3090GU datasheet(2/5 Pages) LEIDITECH

2 / 5 page

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

1.8

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

1.5

2.0

VGS=10V, ID=20A

2.3

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=20A

3.1

3.6

mΩ

Forward Transconductance

gFS

VDS=5V,ID=20A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

2100

Output Capacitance

Coss

773

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

15.5

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

7.5

Turn-on Rise Time

4.0

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=15V,ID=20A

VGS=10V,RG=1.6Ω

7.5

Total Gate Charge

34.8

Gate-Source Charge

Qgs

6.2

Gate-Drain Charge

Qgd

VDS=15V,ID=20A,

VGS=10V

5.1

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=20A

1.2

Diode Forward Current

(Note 2)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = IS

di/dt = 100A/μs

(Note3)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25 ,V

℃ DD=20V,VG=10V,L=0.5mH,Rg=25Ω

LCEP3090GU

Rev :

www.leiditech.com

01.06.2018

2/5

LCEP3090GU датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LCEP3090GU датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL