HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200406

Issued Date : 2004.10.01

Revised Date : 2005.04.22

Page No. : 1/4

HIRF730, HIRF730F

HSMC Product Specification

HIRF730 / HIRF730F

N-CHANNEL POWER MOSFET

Description

Third Generation HEXFETs from international Rectifier provide the

designer with the best combination of fast switching, ruggedized device

design, low on-resistance and cost-effectiveness.

Features

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

Thermal Characteristics

Symbol

Parameter

Value

Units

TO-220AB

1.71

R

θ

JC

Thermal Resistance

Junction to Case Max.

TO-220FP

3.3

°C/W

R

θ

JA

Thermal Resistance

Junction to Ambient Max.

62

°C/W

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

400

V

I

D

Drain to Current (Continuous)

5.5

A

I

DM

Drain to Current (Pulsed) (*1)

22

A

V

GS

Gate-to-Source Voltage (Continue)

±20

V

Total Power Dissipation

TO-220AB

TO-220FP

74

38

W

P

D

Derate above 25

°C

TO-220AB

TO-220FP

0.58

0.3

W/

°C

E

AS

Single Pulse Avalanche Energy (*2)

290

mJ

I

AR

Avalanche Current (*1)

5.5

A

E

AR

Repetitive Avalanche Energy (*1)

7.4

mJ

d

Peak Diode Recovery (*3)

4

V/ns

T

j

Operating Temperature Range

-55 to 150

°C

T

stg

Storage Temperature Range

-55 to 150

°C

T

L

Maximum Lead Temperature for Soldering Purposes, 1/8” from

case for 10 seconds

300

°C

*1: Repetitive rating; pulse width limited by max. junction temperature

HIRF730 Series Pin Assignment

1

2

3

1

2

3

Tab

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

G

D

S

HIRF730 Series Symbol