SEMICONDUCT OR

1

May 1997

Features

• 10A, 30V

•

Temperature Compensating PSPICE Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Formerly developmental type TA49205.

Description

These products are P-Channel power MOSFETs manufac-

tured using the MegaFET process. This process, which uses

feature sizes approaching those of LSI circuits, gives opti-

mum utilization of silicon, resulting in outstanding perfor-

mance. They were designed for use in applications such as

switching regulators, switching converters, motor drivers,

and relay drivers. These transistors can be operated directly

from integrated circuits.

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD10P03L

TO-251AA

10P03L

RFD10P03LSM

TO-252AA

10P03L

RFP10P03L

TO-220AB

F10P03L

NOTE: When ordering, use the entire part number. Add the suffix, 9A,

G

D

S

JEDEC TO-220AB

JEDEC TO-251AA

JEDEC TO-252AA

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

3515.1

RFD10P03L, RFD10P03LSM,

RFP10P03L

10A, 30V, 0.200

Ω, Logic Level

P-Channel Power MOSFET