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RFD10P03LSM датащи(PDF) 5 Page - Harris Corporation

номер детали RFD10P03LSM
подробное описание детали  10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
PDF  12 Pages
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производитель  HARRIS [Harris Corporation]
домашняя страница  http://www.harris.com
Logo HARRIS - Harris Corporation

RFD10P03LSM датащи(HTML) 5 Page - Harris Corporation

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FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
0.4
0.8
1.0
1.2
TJ, JUNCTION TEMPERATURE (
oC)
200
VGS = VDS,ID = -250µA
0.6
125
20
30
40
50
0
25
100
150
50
0
10
RGS, GATE TO SOURCE RESISTANCE (Ω)
td(OFF)
td(ON)
tr
tf
75
VDD = -15V, ID = -10A, RL= 1.50Ω
-30
-22.5
-15
-7.5
0
-5.00
-3.75
-2.50
-1.25
0.00
20
IG(REF)
IG(ACT)
80
IG(REF)
IG(ACT)
t, TIME (
µs)
VDD = BVDSS
RL = 3.0Ω
IG(REF) = -0.25mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VGS = -5V
VDD =BVDSS
800
600
400
200
0
0
-5
-10
-15
-20
-25
VDS, DRAIN TO SOURCE VOLTAGE (V)
1200
CISS
COSS
CRSS
1000
VGS = 0V, f = 1MHz
RFD10P03L, RFD10P03LSM, RFP10P03L



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