LM40P13S datasheet(1/6 Pages) LEIDITECH

номер детали	LM40P13S

подробное описание детали	P-ChannelEnhancement Mode Power MOSFET

PDF	6 Pages

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производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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Description

The LM40P13S uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =-40V,ID =-13A

RDS(ON) <15mΩ @ VGS=-10V

RDS(ON) <18mΩ @ VGS=-4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application

●

Power switching application

●

Hard switched and high frequency circuits

●

DC-DC converter

Schematic diagram

Marking and pin assignment

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

LM40P13S

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-13

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

-9

A

Pulsed Drain Current

IDM

50

A

Maximum Power Dissipation

PD

2.5

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance ,Junction-to-Ambient(Note 2)

RθJA

50

/W

℃

LM40P13S

Enhancement Mode Power MOSFET

P-Channel

NCE40P13S

Rev :

www.leiditech.com

01.06.2018

1/6

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Аналогичное описание - LM40P13S

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