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LM40P13S датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

номер детали LM40P13S
подробное описание детали  P-ChannelEnhancement Mode Power MOSFET
PDF  6 Pages
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производитель  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
домашняя страница  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM40P13S датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM40P13S Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM40P13S Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM40P13S Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM40P13S Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LM40P13S Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd LM40P13S Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.3
-2
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-12A
-
12
15
m
Ω
Forward
Transconductance
gFS
VDS=-15V,ID=-10A
35
-
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
-
2800
-
PF
Output Capacitance
Coss
-
320
-
PF
Reverse Transfer Capacitance
Crss
VDS=-20V,VGS=0V,
F=1.0MHz
-
220
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
-
11
-
nS
Turn-on Rise Time
tr
-
75
-
nS
Turn-Off Delay Time
td(off)
-
89
-
nS
Turn-Off Fall Time
tf
VDD=-20V, ,RL=2Ω
VGS=-10V,RGEN=6Ω
-
35
-
nS
Total Gate Charge
Qg
-
40
-
nC
Gate-Source Charge
Qgs
-
6
-
nC
Gate-Drain Charge
Qgd
VDS=-20V,ID=-12A,
VGS=-10V
-
12
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-12A
-
-
1.2
V
Diode Forward Current (Note 2)
IS
-
-
-13
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤ 10 sec.
3. Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
LM40P13S
Rev :
www.leiditech.com
01.06.2018
2/6



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