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NFAM2012L5B датащи(PDF) 7 Page - ON Semiconductor

номер детали NFAM2012L5B
подробное описание детали  Intelligent Power Module (IPM) 1200 V, 20 A
PDF  9 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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NFAM2012L5B датащи(HTML) 7 Page - ON Semiconductor

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Table 5. ELECTRICAL CHARACTERISTICS (Tc = 25°C, VD = 15 V, unless otherwise noted) (Note 6) (continued)
Parameter
Unit
Max
Typ
Min
Symbol
Test Conditions
DRIVER SECTION
Quiescent VBS Supply Current
VBS = 15 V
HIN(U, V, W) = 0 V
VB(U) − VS(U)
VB(V) − VS(V)
VB(W) − VS(W)
IQBS
−
−
0.30
mA
Operating VBS Supply Current
VDD = VBS = 15 V, fPWM =
20 kHz, Duty = 50%, Applied
to one PWM Signal Input
for High−Side
VB(U) − VS(U)
VB(V) − VS(V)
VB(W) − VS(W)
IPBS
−
−
8.00
mA
ON Threshold Voltage
HIN(U, V, W) − VSS, LIN(U, V, W) − VSS
VIN(ON)
2.6
V
OFF Threshold Voltage
VIN(OF)
0.8
V
Short Circuit Trip Level
VDD = 15 V, CIN−VSS
VCIN(ref)
0.46
0.48
0.50
V
Supply Circuit Under−Voltage
Protection
Detection Level
UVDDD
10.3
12.5
V
Reset Level
UVDDR
10.8
13.0
V
Detection Level
UVBSD
10.0
12.0
V
Reset Level
UVBSR
10.5
12.5
V
Voltage Output for LVIC
Temperature Sensing Unit
VTS−VSS = 10 nF, Temp. = 25°C
VTS
(0.905) (1.030) (1.155)
V
Fault Output Voltage
VDD = 0 V, CIN = 0 V,
VFO Circuit: 10 kW to 5 V Pull−up
VFOH
4.9
−
−
V
VDD = 0 V, CIN = 1 V,
VFO Circuit: 10 kW to 5 V Pull−up
VFOL
−
−
0.95
V
Fault−Output Pulse Width
CFOD = 22 nF
tFOD
1.6
2.4
−
ms
BOOTSTRAP SECTION
Bootstrap Diode Forward Current If = 0.1 A
VF
3.4
4.6
5.8
V
Built−in Limiting Resistance
RBOOT
30
38
46
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25_C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
7. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:
tFOD = (TBD) x 106 x CFOD (s)
8. Values based on design and/or characterization.
Figure 4. Temperature of LVIC versus VOT Characteristics
LVIC Temperature (°C)
40
45
50 55 60 65
70 75 80 85 90
95 100 105 110 115 120 125 130
1.0
1.5
2.0
2.5
3.0
3.5
4.0



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