d

Monolithic Transistor Array – SiS3045F

Rev 1.1

20/10/17

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Base Breakdown Voltage

20

60

-

V

Collector to Emitter Breakdown Voltage

15

24

-

V

Collector-to-Substrate Breakdown

Voltage

20

60

-

V

Emitter to Base Breakdown Voltage

5

7

-

V

Collector Cutoff Current

-

0.002

40

nA

Collector Cutoff Current (Figure 2)

-

FIG 2

0.5

µA

-

100

-

-

40

100

-

-

Forward Current Transfer Ratio

(Static Beta) (Note 3) (Figure 3)

-

54

-

-

Input Offset Current for Matched Pair

Q1 and Q2. (Note 2) (Figure 4)

-

0.3

2

µA

-

0.715

-

Base-to-Emitter Voltage (Note 2)

(Figure 5)

-

0.800

-

V

Magnitude of Input Offset Voltage for

Differential Pair (Note 2) (Figures 5, 7)

-

0.45

5

mV

Magnitude of Input Offset Voltage for

Isolated Transistors. (Note 2)

(Figures 5, 7)

-

0.45

5

mV

Temperature Coefficient of Base-to-

Emitter Voltage (Figure 6)

ΔT

-

-1.9

-

mV/°C

Collector-to-Emitter Saturation Voltage

-

0.23

-

V

Temperature Coefficient: Magnitude of

Input Offset Voltage (Figure 7)

ΔT

-

1.1

-

µV/°C

PARAMETER

SYMBOL

TEST

CONDITIONS

MIN

TYP

MAX

UNITS

Low Frequency Noise Figure

(Figure 9)

NF

Resistance = 1kΩ

-

3.25

-

dB

Low Frequency, Small Signal Equivalent Circuit Characteristics

Forward Current Transfer Ratio

(Figure 11)

f = 1 kHz

-

110

-

-

Short Circuit Input Impedance

(Figure 11)

f = 1 kHz

-

3.5

-

kΩ

Open Circuit Output Impedance

(Figure 11)

f = 1 kHz

-

15.6

-

µmho

Open Circuit Reverse Voltage

Transfer Ratio (Figure 11)

f = 1 kHz

-

1.8 x 10

-4

-

Page 2 of 6

www.siliconsupplies.com

-