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Monolithic Transistor Array – SiS3045F

Silicon General Purpose x5 NPN Transistor array in CERDIP-14

Rev 1.1

20/10/17



Two matched transistors:

-

-



Low Noise Figure 3.2dB (Typ) at 1kHz



Operation From DC to 120MHz



Wide Operating Current Range



Full Military Temperature Range.

Features:

Ordering Information

The following part suffixes apply:

SiS3045F - 14 Lead Ceramic Dual-In-Line Package

The SiS3045F consists of five general purpose silicon NPN

transistors on a common monolithic substrate. Two of the

transistors are internally connected to form a differentially-

connected pair. The transistors are well suited to a wide

variety of applications in low power systems in the DC

through VHF range. They may be used as discrete

transistors in conventional circuits however; in addition, they

provide the very significant inherent integrated circuit

advantages of close electrical and thermal matching. The

SiS3045F is a direct electrical & mechanical replacement

for the obsolete Intersil CA3045F.

Description

Schematic & Connection Diagram

Absolute Maximum Ratings

PARAMETER

SYMBOL

VALUE

UNIT

Collector-to-Emitter Voltage

15

V

Collector-to-Base Voltage

20

V

Collector-to-Substrate Voltage (Note 1)

20

V

Emitter-to-Base Voltage

5

V

Collector Current

50

mA

Maximum Power Dissipation (Any one transistor)

300

mW

Operating Temperature Range

-

-55 to 125

°C

Maximum Junction Temperature

175

°C

Q5

Q4

Q1

Q2

Q3

14

13

12

11

10

9

8

1

2

3

4

5

6

7

SUBSTRATE



Three Isolated Transistors and One

Differentially Connected Transistor Pair for

Low Power Applications at Frequencies from

DC Through the VHF Range



Custom Designed Differential Amplifiers



Temperature Compensated Amplifiers.

Applications: