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SWIFO111E датащи(PDF) 3 Page - Seoul Semiconductor

номер детали SWIFO111E
подробное описание детали  Direct TV Application
PDF  23 Pages
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производитель  SEOUL [Seoul Semiconductor]
домашняя страница  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

SWIFO111E датащи(HTML) 3 Page - Seoul Semiconductor

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R00 January 9, 2020
www.seoulsemicon.com
Product Data Sheet
SWIFO111E
– WICOP
3
Performance Characteristics
Table 2. Electro Optical Characteristics (T
a = 25ºC)
Notes :
(1) Forward voltage measurement allowance is ±0.1V
(2) The luminous Flux value is based on SSC Calibration. Luminous Flux measurement allowance is ±7%.
(3) 2
1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(4) R
th can be different by Tb (PCB) at the ambient temperature(Ta= 25℃, PCB : SSC standard)
Parameter
Symbol
Value
Unit
Power Dissipation
P
d
*1
2420
mW
DC Forward Current
I
F
650
mA
Operating Temperature
T
opr
-30 ~ +85
ºC
Storage Temperature
T
stg
-40 ~ +100
ºC
Junction Temperature
T
j max
125
ºC
Notes :
(1) Care is to be taken that power dissipation does not exceed the absolute maximum rating of the
product.
Table 1. Absolute Maximum Ratings (T
a = 25ºC)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage*1
V
F
I
F =350mA
2.80
3.00
3.30
V
Luminous Flux*2
Ф
V
I
F =350mA
72.0
78.0
-
lm
Viewing Angle*3
H axis-2
½
I
F =350mA
140
deg.
V axis-2
½
I
F =350mA
140
deg.
CIE x
C
x
I
F =350mA
-
0.264
-
-
CIE y
C
y
I
F =350mA
-
0.230
-
-
Thermal Resistance
(Junction to Board) *4
R
th(j-b)
I
F =650mA
-
15
-
K/W
ESD Sensitivity
HBM
2
-
-
kV



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