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FTK0980P датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK0980P
подробное описание детали  100V N-Channel MOSFETs
PDF  5 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0980P датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK0980P Datasheet HTML 1Page - First Silicon Co., Ltd FTK0980P Datasheet HTML 2Page - First Silicon Co., Ltd FTK0980P Datasheet HTML 3Page - First Silicon Co., Ltd FTK0980P Datasheet HTML 4Page - First Silicon Co., Ltd FTK0980P Datasheet HTML 5Page - First Silicon Co., Ltd  
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100V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
IDSS
Drain-Source Leakage Current
VDS=100V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=20V , VDS=0V
---
---
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=20A
---
3.5
4.2
mΩ
VGS=4.5V , ID=15A
---
4.5
6.0
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
gfs
Forward Transconductance
VDS=10V , ID=3A
---
20
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=80V , VGS=10V , ID=10A
---
110
165
nC
Qgs
Gate-Source Charge3 , 4
---
11.5
18
Qgd
Gate-Drain Charge3 , 4
---
28
42
Td(on)
Turn-On Delay Time3 , 4
VDD=50V , VGS=10V , RG=6Ω
ID=1A
---
23
46
ns
Tr
Rise Time3 , 4
---
32
64
Td(off)
Turn-Off Delay Time3 , 4
---
157
320
Tf
Fall Time3 , 4
---
115
230
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
6680
13300
pF
Coss
Output Capacitance
---
1690
3380
Crss
Reverse Transfer Capacitance
---
78
156
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.9
---
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
150
A
ISM
Pulsed Source Current
---
---
300
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=87A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2019. 03. 06
2/5
Revision No : 0
FTK0980P



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