100V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

100

V

Gate-Sou

rce Voltage

+20/-12

V

150

A

95

A

600

A

EAS

378

mJ

IAS

87

A

275

W

Power Dissipation – Derate above 25℃

2.22

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

100V

4.2m

Ω

150A

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

0.45

℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 100V,150A, RDS(ON) =4.2m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

TO-220 Pin Configuration

 Networking

 Load Switch

 LED applications

 Quick Charger

1

3

2

1. Gate

2. Drain

3. Source

D

G

S

SEMICONDUCTOR

TECHNICAL DATA

FTK0980P

2019. 03. 06

1/5

Revision No : 0