STM32L021D4 datasheet(51/114 Pages) STMICROELECTRONICS

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STM32L021x4

Electrical characteristics

6.3.3

Embedded internal reference voltage

The parameters given in Table 20 are based on characterization results, unless otherwise

specified.

Table 19. Embedded internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at

temperature of 25°C

VDDA= 3 V

0x1FF8 0078 - 0x1FF8 0079

Table 20. Embedded internal reference voltage(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT out(2)

Internal reference voltage

– 40 °C < TJ < +125 °C 1.202

1.224

1.242

TVREFINT

Internal reference startup time

VVREF_MEAS

VDDA voltage during VREFINT

factory measure

-2.99

3.01

AVREF_MEAS

Accuracy of factory-measured

VREFINT value(3)

Including uncertainties

due to ADC and VDDA

values

±5

TCoeff(4)

Temperature coefficient

–40 °C < TJ < +125 °C

100

ppm/°C

0 °C < TJ < +50 °C

ACoeff(4)

Long-term stability

1000 hours, T= 25 °C

1000

ppm

VDDCoeff(4)

Voltage coefficient

3.0 V < VDDA < 3.6 V

2000

ppm/V

TS_vrefint(4)(5)

ADC sampling time when

reading the internal reference

voltage

-5

µs

TADC_BUF(4)

Startup time of reference

voltage buffer for ADC

µs

IBUF_ADC(4)

Consumption of reference

voltage buffer for ADC

13.5

µA

IVREF_OUT(4)

VREF_OUT output current(6)

µA

CVREF_OUT(4)

VREF_OUT output load

ILPBUF(4)

Consumption of reference

voltage buffer for VREF_OUT

and COMP

730

1200

VREFINT_DIV1(4) 1/4 reference voltage

VREFINT

VREFINT_DIV2(4) 1/2 reference voltage

VREFINT_DIV3(4) 3/4 reference voltage

1. Refer to Table 32: Peripheral current consumption in Stop and Standby mode for the value of the internal reference current

consumption (IREFINT).

2. Guaranteed by test in production.

3. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.

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