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TLE8457CSJ датащи(PDF) 20 Page - Infineon Technologies AG |
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TLE8457CSJ датащи(HTML) 20 Page - Infineon Technologies AG |
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20 / 31 page ![]() Data Sheet 20 Rev. 1.1 2018-10-15 TLE8457C / TLE8457D LIN Transceiver with integrated voltage regulator Electrical characteristics 6 Electrical characteristics 6.1 Functional device characteristics Table 6 Electrical characteristics 5.5 V < VS <28 V; RLIN = 500 Ω; -40°C < Tj < 150°C; all voltages with respect to ground; positive current flowing into pin1); unless otherwise specified. Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Current Consumption Current consumption at VS, transmitter in recessive state IS,rec 0.1 0.3 0.7 mA ICC =50 µA; without RLIN; TxD = “high”; VBUS = VS; NRST=”high” P_6.1.1 Current consumption at VS, transmitter in dominate state IS,dom 0.1 1.0 3.0 mA ICC =50 µA; without RLIN; TxD = “low”; VBUS =0 V; NRST=”high” P_6.1.2 Current consumption at VS, dominate state IS,dom_max 70 71 73 mA ICC = 70 mA; without RLIN; TxD = “low”; VBUS =0 V; NRST=”high” P_6.1.3 Current consumption at VSin standby mode IS,standby = IS - ICC IS,standby –20 40 µA Standby mode; ICC =50 µA; VS = VBUS = 13.5 V; NRST =TxD =“high” P_6.1.4 Current consumption at VS in sleep mode IS,Sleep – 7 16 µA Sleep mode; VS = 13.5 V; VBUS =VS; VCC =0 V P_6.1.5 Current consumption at VSin sleep mode. BUS shorted to GND IS,SC_GND 250 – 800 µA Sleep Mode; VS = 13.5 V; VBUS =0 V; VCC =0 V P_6.1.6 Power-up and power-down Power-on reset level, VS on VS,PON –– 3.0 V – P_6.1.7 Undervoltage threshold, VS on VS,UV,ON 4.7 5.15 5.5 V Rising edge P_6.1.8 Undervoltage threshold, VS off VS,UV,OFF 4.4 4.85 5.2 V Falling edge P_6.1.9 Undervoltage hysteresis on VS VS,UV,hys = VS,UV,ON - VS,UV,OFF VS,UV,hys 200 300 – mV 2) P_6.1.10 Undervoltage blanking time tBLANK,UV –10 – µs 2) P_6.1.11 Enable input: EN “High” level input voltage VEN,ON 2– – V – P_6.1.12 “Low” level input voltage VEN,OFF –– 0.8 V – P_6.1.13 Input hysteresis VEN,hys 50 200 – mV – P_6.1.14 Pull-down resistance REN 15 30 60 kΩ – P_6.1.15 Delay time for mode change, EN → “low” tMODE,LOW 10 – 50 µs – P_6.1.16 |
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