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Product data sheet

Rev. 02 — 7 April 2005

3 of 11

Philips Semiconductors

PESDxV4UG series

Very low capacitance quadruple ESD protection diode arrays

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5; see

Figure 1.

[2]

Measured from pin 1, 3, 4 or 5 to 2.

[1]

Device stressed with ten non-repetitive ESD pulses; see Figure 2.

[2]

Measured from pin 1, 3, 4 or 5 to 2.

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6:

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1] [2]

PESD3V3V4UG

-

12

kV

PESD5V0V4UG

-

12

kV

PESDxV4UG series

HBM MIL-STD-883

-

10

kV

Table 7:

ESD standards compliance

Standard

Conditions

IEC 61000-4-2; level 4 (ESD); see Figure 2

> 8 kV (contact)

HBM MIL-STD-883; class 3

> 4 kV

Table 5:

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Fig 1.

8/20

µs pulse waveform according to

IEC 61000-4-5

Fig 2.

ESD pulse waveform according to

IEC 61000-4-2

t (

µs)

040

30

10

20

001aaa630

40

80

120

(%)

0

001aaa631

100 %

90 %

t

30 ns

60 ns

10 %