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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 7 April 2005

4 of 11

Philips Semiconductors

PESDxV4UG series

Very low capacitance quadruple ESD protection diode arrays

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5; see Figure 1.

[2]

Measured from pin 1, 3, 4 or 5 to 2.

Table 8:

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

reverse stand-off voltage

PESD3V3V4UG

-

-

3.3

V

PESD5V0V4UG

-

-

5.0

V

reverse leakage current

see Figure 6;

PESD3V3V4UG

-

40

300

nA

PESD5V0V4UG

-

3

25

nA

breakdown voltage

PESD3V3V4UG

5.3

5.6

5.9

V

PESD5V0V4UG

6.4

6.8

7.2

V

diode capacitance

f = 1 MHz; see Figure 5;

PESD3V3V4UG

-

15

18

pF

-

9

12

pF

PESD5V0V4UG

-

12

15

pF

-

6

9

pF

clamping voltage

[1] [2]

PESD3V3V4UG

-

-

9

V

-

-

11

V

PESD5V0V4UG

-

-

11

V

-

-

13

V

differential resistance

PESD3V3V4UG

-

-

200

Ω

PESD5V0V4UG

-

-

100

Ω