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CS91 датащи(PDF) 1 Page - fujitsu semiconductor |
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CS91 датащи(HTML) 1 Page - fujitsu semiconductor |
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1 / 9 page ![]() DS06-20208-3E FUJITSU SEMICONDUCTOR DATA SHEET Copyright©2002-2006 FUJITSU LIMITED All rights reserved Semicustom CMOS Standard cell array CS91 Series ■ DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16 ps, resulting in both integration and speed about three times higher than conventional products. ■ FEATURES • Technology : 0.11 µm silicon-gate CMOS, 5- to 8-layer wiring (Copper is used as wire material.) , Low-K (2.7) Inter-layer material (Inter-layer material that has low permittivity) • Support for high speed, high integration, low leak internal cell set. Capable of incorporating on the same chip. • Supply voltage : +1.2 V ± 0.1 V (standard specification) • Junction temperature range : −40 °C to +125 °C • Gate delay time : tpd = 16 ps (1.2 V, inverter, F/O = 1) • Gate power consumption : Pd = 6.6 nW/MHz/BC (1.2 V, inverter, F/O = 1) • Support for ultra high speed (622 Mbps to 780 Mbps, 2.5 Gbps to 3.125 Gbps, 10 Gbps) interface macros for transmission • Special interfaces* : P-CML, LVDS, PCI, SSTL, HSTL, T-LVTTL, and others. • Buffer cell dedicated to crystal oscillator • IP macros* : CPU (ARM9, ARM7TDMI) , DSP, PCI, IEEE1394, USB, IrDA, PLL, ADC, DAC, and others. • Compiled cells (RAM/ROM/multiplier, and others.) • Uses industry standard tools and supports the optimum tools for the application • Short-term development using a physical prototyping tool • Hierarchical design environment for supporting large-scale circuits • Support for SIGNAL INTEGRITY, EMI noise reduction • Support for High resolution RC extraction base delay calculation environment • Support for optimization environment of power supply wire (Continued) |
Аналогичный номер детали - CS91 |
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Аналогичное описание - CS91 |
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