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LM3075 датащи(PDF) 12 Page - National Semiconductor (TI) |
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LM3075 датащи(HTML) 12 Page - National Semiconductor (TI) |
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12 / 18 page ![]() Operating Descriptions (Continued) level of 2V (typical) and it enters ready mode as it does when the IC first was powered up. The UVP stays in ready mode until a new under-voltage event is detected. POWER GOOD FUNCTION A power good signal is available for indicating the general state of the IC. The function is realized through the internal MOSFET tied from the PGOOD pin to ground. The power good signal is asserted by turning off the MOSFET. The on resistance of the power good MOSFET is about 300 Ω. The internal power good MOSFET is not turned on unless at least one of the following occurs: 1. There is an output over-voltage event. 2. The output voltage is below the power good lower limit (UVP event). 3. System is in shutdown mode, i.e. the EN pin voltage is below 0.6V. As with the other protection responses, the power good signal has built-in hysteresis. See V PWR_GOOD in the Elec- trical Characteristics table. FREQUENCY SELECT The operating frequency may be set at 200 kHz or 300 kHz by the voltage on the frequency select (FS) pin. A voltage of 0V corresponds to a frequency of 200 kHz and a voltage of 5V corresponds to a frequency of 300 kHz. See the Electrical Characteristics table for more information. VLIN5, VDD and EXT An internal 5V supply (V LIN5) is generated from the VIN voltage through an internal linear regulator. This 5V supply is mainly for internal circuitry use, but can also be used exter- nally. When used externally, it is recommended that the V LIN5 voltage only be used for powering the gate drivers, i.e. supplying the bias for the top drivers’ bootstrap circuit and the bottom drivers’ VDD pins. When the voltage applied to the EXT pin is below 4.7V, an internal 5V low dropout regu- lator supplies the power for the V LIN5. If the EXT voltage is taken above 4.7V, the 5V regulator is turned off and an internal switch is turned on to connect the EXT pin to the VLIN5 pin. This allows the VLIN5 power to be derived from a high efficiency source such as the output of the switching channel, when the channel is configured to operate in fixed 5V mode. The V LIN5 voltage output comes from the EXT pin whenever the voltage applied to the EXT pin is higher than 4.7V. The externally applied voltage is required to be less than the voltage applied to the VIN pin at all times. This prevents a voltage feedback situation from the EXT pin to the VIN pin. When the input voltage must be guaranteed to be within 4.5V to 5.5V, tie the VLIN5 pin directly to the VIN pin and tie the EXT pin to ground. In this mode, the V LIN5 current directly comes from power stage input rail and power loss due to the internal linear regulation is no longer an issue. Always connect the VDD pin to the VLIN5 pin through a 4.7 Ω resistor and connect a ceramic capacitor of at least 1 µF to bypass the VDD pin to ground. THERMAL PROTECTION The LM3075 IC enters thermal protection mode if the die temperature exceeds 160˚C. In this mode, the top and bot- tom FETs are turned off immediately. The IC then behaves in a manner as described in the Fault State section. OUTPUT CAPACITORS FOR LINEAR REGULATORS Like any linear regulator, the linear output that is either generated or controlled by the LM3075 requires an output capacitor to ensure stability. The output of VLIN5 needs a minimum of 4.7 µF. SWITCHING NOISE REDUCTION Power MOSFETs are very fast switching devices. In a syn- chronous rectifier converter, the rapid drain current rise rate of the top FET coupled with parasitic inductance generates unwanted Ldi/dt spike noise at the source node of the FET (SW pin). The magnitude of the spike noise increases as the output current increases. This parasitic spike noise may turn into electromagnetic interference (EMI) that may cause trouble to the system performance. Therefore, it is vital to correct system performance to suppress this kind of noise. As shown in Figure 3, adding a resistor in series with the CBOOT pin scales the spikes and slow down the gate drive (HDRV) rise time of the top FET to yield a desired drain current transition time. Usually a 3.3 Ω to 5.1Ω resistor is sufficient to suppress the noise. It is important to note that the addition of these resistors does increase the power loss in the system and thus decreases the efficiency. It is there- fore important to choose the size of the resistor carefully; the top FET switching losses increases with higher resistance values. Component Selection OUTPUT VOLTAGE SETTING The output voltage for each channel is set by the ratio of a voltage divider as shown in Figure 4. The resistor values can be determined by the following equation: (1) Where V FB is the typical value of feedback pin voltage and V OUT is the nominal output voltage . Although increasing the value of R 1 and R2 increases efficiency, this also decreases accuracy. Therefore, a maximum value is recommended for R 2 in order to keep the output within 0.3% of VOUT. This maximum R 2 value should be calculated first with the follow- ing equation: 20162310 FIGURE 3. Adding a resistor in series with the CBOOT pin to suppress the turn-on switching noise www.national.com 12 |
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