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LM3075 датащи(PDF) 3 Page - National Semiconductor (TI) |
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LM3075 датащи(HTML) 3 Page - National Semiconductor (TI) |
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3 / 18 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Voltages from the indicated pins to GND: VIN, ILIM, CSH −0.3V to 38V SW, CSL −0.3 to (V IN + 0.3V) PGOOD, FB, VDD, EXT, EN −0.3V to +7V COMP, SS, FPWM, FS −0.3V to (V LIN5 +0.3)V CBOOT -0.3V to +43V CBOOT to SW −0.3V to 7V LDRV −0.3V to (V DD+0.3V) HDRV to SW −0.3V HDRV to CBOOT +0.3V Storage Temperature Range −65˚C to +150˚C Junction Temperature 150˚C Lead Temperature (Soldering, 10 sec) 260˚C ESD Rating (Note 2) 1.5kV Operating Ratings(Note 1) Junction Temperature −40˚C to +125˚C VIN to GND 4.5V to 36V EXT 6V Max Electrical Characteristics Limits in standard type are for T J = 25˚C only, and limits in boldface type apply over the junction temperature T J range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, de- sign, or statistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for ref- erence purposes only. Unless otherwise specified V IN = 12V. Symbol Parameter Conditions Min Typ Max Unit V FB Feedback pin voltage V IN = 4.5V to 36V 1.213 1.238 1.259 V Load Regulation V COMP = 0.5V to 1.5V 0.04 % Line Regulation V IN = 4.5V to 36V 0.04 % I Q Operating Quiescent current V IN = 4.5V to 36V 1.0 2 mA I SD Shutdown Quiescent current V EN =0V 60 100 µA V LIN5 V LIN5 Output Voltage I VLIN5 = 0 to 25mA V V IN = 5.5V to 36V 4.7 5 5.3 V UVLO V LIN5 Under Voltage Lockout 3.7 3.9 4.1 V V UVLO_HYS V LIN5 Under Voltage Lockout Hysteresis 0.2 V V CL_OS Current Limit Comparator Offset (V ILIM –VCSL) ±0.2 mV I ILIM I LIM sink current 8.3 10 11.3 µA I SS_SRC Soft-Start Pin Source Current V SS = 1.2V 1 2 3 µA I SS_SNK Soft-Start Pin Sink Current V SS =2V 4 µA V SS_TO Soft-Start Timeout Threshold 2V V OVP Over Voltage Protection Rising Threshold With respect to V FB 105 111 117 % V OVP_HYS Over Voltage Protection Hysteresis With respect to V FB 2.8 % POWERGOOD V PWR_GOOD PGOOD Rising Threshold 92.5 95.5 98.5 % V PWR_BAD PGOOD Falling Threshold 87 90.5 95 % T PGOOD PGOOD delay PGOOD pin de-asserting 10 µs I OL PGOOD Low Sink Current V PGOOD = 0.4V 0.6 1mA I OH PGOOD High Leakage Current V PGOOD =5V 5 200 nA GATE DRIVE www.national.com 3 |
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