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HMC8412LP2FE датащи(PDF) 17 Page - Analog Devices

номер детали HMC8412LP2FE
подробное описание детали  Low Noise Amplifier, 0.4 GHz to 11 GHz
PDF  18 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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HMC8412LP2FE датащи(HTML) 17 Page - Analog Devices

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Data Sheet
HMC8412
Rev. 0 | Page 17 of 18
APPLICATIONS INFORMATION
The basic connections for operating the HMC8412 over the
specified frequency range are shown in Figure 60. No external
biasing inductor is required, allowing the 5 V supply to be
connected to the VDD pin. 0.1 µF and 100 pF power supply
decoupling capacitors are recommended. The power supply
decoupling capacitors shown in Figure 60 represent the
configuration used to characterize and qualify the HMC8412.
It is possible to reduce the number of capacitors, but this varies
from system to system. It is recommended to first remove the
largest capacitors that are farthest from the device when
reducing the number of capacitors.
To set IDQ, connect a resistor, R1, between the RBIAS and VDD
pins. A default value of 1.47 kΩ is recommended, which results
in a nominal IDQ of 60 mA. Table 8 shows how the IDQ and IDD
varies vs. the bias resistor value. The RBIAS pin also draws a
current that varies with the value of RBIAS (see Table 8). Do not
leave the RBIAS pin open.
GND
R1
RBIAS
1.47kΩ
C3
0.1µF
C2
100pF
C1
0.1µF
RFIN
RFOUT
VDD
1
2
4
5
3
6
GND
GND
GND
Figure 60. Typical Application Circuit
RECOMMENDED BIAS SEQUENCING
Power-Up Sequence
To power up, follow this bias sequence:
1. Set VDD to 5 V.
2. Apply the RF signal.
Power-Down Sequence
To power down, follow this bias sequence:
1. Turn off the RF signal.
2. Set VDD to 0 V.
Table 8. Recommended Bias Resistor Values
RBIAS (Ω)
Total Current (mA)
IDD (mA)
RBIAS Current (mA)
670
80
77.05
2.95
790
75
72.29
2.71
1000
70
67.53
2.47
1170
65
62.76
2.24
1470
60
58.04
1.96
1730
55
53.24
1.76
2100
50
48.45
1.55
2600
45
43.67
1.33
3300
40
38.89
1.11
4300
35
34.11
0.89
5900
30
29.38
0.62
8500
25
24.51
0.49
14000
20
19.69
0.31



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