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HMC8412LP2FE датащи(PDF) 12 Page - Analog Devices

номер детали HMC8412LP2FE
подробное описание детали  Low Noise Amplifier, 0.4 GHz to 11 GHz
PDF  18 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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HMC8412LP2FE датащи(HTML) 12 Page - Analog Devices

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HMC8412
Data Sheet
Rev. 0 | Page 12 of 18
20
0
–14
10
INPUT POWER (dBm)
72
56
60
64
68
POUT
GAIN
PAE
IDD
5
10
15
–12 –10
–8
–6
–4
–2
0
2
4
6
8
Figure 37. Gain, PAE, POUT, and IDD vs. Input Power,
Power Compression at 10 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
25
0
2
3
4
5
6
SUPPLY VOLTAGE (V)
PSAT
GAIN
OP1dB
IDD
5
10
15
20
80
70
60
50
40
30
Figure 38. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 3 GHz, RBIAS = 1.47 kΩ
25
0
2
3
4
5
6
SUPPLY VOLTAGE (V)
PSAT
GAIN
OP1dB
IDD
5
10
15
20
80
70
60
50
40
30
Figure 39. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 10 GHz, RBIAS = 1.47 kΩ
25
0
2
3
4
5
6
SUPPLY VOLTAGE (V)
PSAT
GAIN
OP1dB
IDD
5
10
15
20
80
70
60
50
40
30
Figure 40. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 1 GHz, RBIAS = 1.47 kΩ
25
0
2
3
4
5
6
SUPPLY VOLTAGE (V)
PSAT
GAIN
OP1dB
IDD
5
10
15
20
80
70
60
50
40
30
Figure 41. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 6 GHz, RBIAS = 1.47 kΩ
0.9
0
–14
12
INPUT POWER (dBm)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
–12 –10 –8
–6
–4
–2
0
2
4
6
8
10
1GHz
3GHz
6GHz
10GHz
MAXIMUM PDISS
Figure 42. PDISS vs. Input Power at TA = 85°C,
VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ



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