IXFH8N80 datasheet(1/4 Pages) IXYS

номер детали	IXFH8N80

подробное описание детали	HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

TestConditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

800

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

8N80

8

A

9N80

9

A

I

DM

T

C = 25°C, pulse width limited by TJM

8N80

32

A

9N80

36

A

I

AR

T

C = 25°C

8N80

8

A

9N80

9

A

E

AR

T

C = 25°C18

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

180

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Symbol

TestConditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3 mA

800

V

DSS temperature coefficient

0.088

%/K

V

GS(th)

V

DS = VGS, ID = 2.5 mA

2

4.5

V

GS(th) temperature coefficient

-0.257

%/K

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = 0.8 VDSS

T

J = 25°C

250

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

8N80

1.1

Ω

Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%

9N80

0.9

Ω

HiPerFETTM

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

rr, HDMOS

TM

Family

TO-247 AD (IXFH)

Features

•

International standard packages

•

Low R

DS (on) HDMOS

TM

process

•

Rugged polysilicon gate cell structure

•

Unclamped Inductive Switching (UIS)

rated

•

Low package inductance

- easy to drive and to protect

•

Fast intrinsic Rectifier

Applications

•

DC-DC converters

•

Battery chargers

•

Switched-mode and resonant-mode

power supplies

•

DC choppers

•

AC motor control

•

Temperature and lighting controls

Advantages

•

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

•

Space savings

•

High power density

V

DSS

I

D25

R

DS(on)

t

rr

IXFH8N80 800V

8A

1.1Ω

250 ns

IXFH9N80 800V

9A

0.9Ω

250 ns

96527A (8/97)

Preliminary Data Sheet

G

S

D (TAB)

G = Gate

D

= Drain

S = Source

TAB = Drain

*Add suffix letter "S" for surface mountable

package

TO-247 SMD*

Аналогичный номер детали - IXFH8N80

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Inchange Semiconductor ...	IXFH8N80	372Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - IXFH8N80

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