IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH8N80

IXFH9N80

TO-247 AD (IXFH) Outline

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min. typ. max.

I

S

V

8N80

8 A

9N80

9 A

I

SM

Repetitive; pulse width limited by T

JM

8N80

32 A

9N80

36 A

V

SD

I

1.5 V

Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %

t

rr

T

250 ns

T

400 ns

Q

RM

T

0.5

µC

T

1.0

µC

I

RM

T

7.5

A

T

9.0

A

I

-di/dt = 100 A/µs,

V

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

4

7

S

C

iss

2600

pF

C

oss

V

GS

= 0 V, V

240

pF

C

rss

60

pF

t

d(on)

35

ns

t

r

V

GS

= 10 V, V

15

ns

t

d(off)

R

70

ns

t

f

35

ns

Q

g(on)

85 130

nC

Q

gs

V

GS

= 10 V, V

15

30

nC

Q

gd

40

70

nC

R

thJC

0.7 K/W

R

thCK

0.25

K/W

1. Gate

2. Drain

3. Source

4. Drain

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.83

5.21

.190

.205

A1

2.29

2.54

.090

.100

A2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b1

1.91

2.13

.075

.084

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45

BSC

.215

BSC

L

4.90

5.10

.193

.201

L1

2.70

2.90

.106

.114

L2

2.10

2.30

.083

.091

L3

0.00

0.10

.00

.004

L4

1.90

2.10

.075

.083

ØP

3.55

3.65

.140

.144

Q

5.59

6.20

.220

.244

R

4.32

4.83

.170

.190

S

6.15

BSC

.242

BSC

TO-247 SMD Outline