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FS32K112BHTXMLFTR датащи(PDF) 16 Page - NXP Semiconductors

номер детали FS32K112BHTXMLFTR
подробное описание детали  Low-power Arm Cortex-M4F/M0 core with excellent energy efficiency
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производитель  NXP [NXP Semiconductors]
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FS32K112BHTXMLFTR датащи(HTML) 16 Page - NXP Semiconductors

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Table 7. Supplies decoupling capacitors 1, 2
Symbol
Description
Min. 3
Typ.
Max.
Unit
CREF, 4, 5
ADC reference high decoupling capacitance
70
100
—
nF
CDEC5, 6, 7
Recommended decoupling capacitance
70
100
—
nF
1. VDD and VDDA must be shorted to a common source on PCB. The differential voltage between VDD and VDDA is for RF-AC
only. Appropriate decoupling capacitors to be used to filter noise on the supplies. See application note AN5032 for
reference supply design for SAR ADC. All VSS pins should be connected to common ground at the PCB level.
2. All decoupling capacitors must be low ESR ceramic capacitors (for example X7R type).
3. Minimum recommendation is after considering component aging and tolerance.
4. For improved performance, it is recommended to use 10 μF, 0.1 μF and 1 nF capacitors in parallel.
5. All decoupling capacitors should be placed as close as possible to the corresponding supply and ground pins.
6. Contact your local Field Applications Engineer for details on best analog routing practices.
7. The filtering used for decoupling the device supplies must comply with the following best practices rules:
• The protection/decoupling capacitors must be on the path of the trace connected to that component.
• No trace exceeding 1 mm from the protection to the trace or to the ground.
• The protection/decoupling capacitors must be as close as possible to the input pin of the device (maximum 2 mm).
• The ground of the protection is connected as short as possible to the ground plane under the integrated circuit.
General
S32K1xx Data Sheet, Rev. 12, 02/2020
16
NXP Semiconductors



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