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NFAQ0860L36T датащи(PDF) 6 Page - ON Semiconductor |
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NFAQ0860L36T датащи(HTML) 6 Page - ON Semiconductor |
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6 / 14 page ![]() NFAQ0860L36T www.onsemi.com 6 Table 4. ELECTRICAL CHARACTERISTICS at TC = 25 _C, VBIAS (VBS, VDD) = 15 V unless otherwise noted. Parameter Test Conditions Symbol Min Typ Max Unit Power Output Section Collector−Emitter Leakage Current VCE = 600 V ICES − − 100 mA Collector−Emitter Saturation Voltage IN = 5 V, IC = 8 A, Tj = 25 _C VCE(sat) − 2.4 3.0 V IN = 5 V, IC = 4 A, Tj = 100 _C − 1.9 − V FWDi Forward Voltage IN = 0 V, IC = −8 A, Tj = 25 _C VF − 2.1 2.7 V IN = 0 V, IC = −4 A, Tj = 100 _C − 1.6 − V Junction to Case Thermal Resistance Inverter IGBT Part (per 1/6 Module) Rth(j−c)Q − − 3.9 _C/W Inverter FRD Part (per 1/6 Module) Rth(j−c)F − − 7.3 _C/W Switching Character Switching Time IC = 8 A, VPN = 300 V, Tj = 25_C, Inductive Switching tON − 0.4 1.1 ms tOFF − 0.4 1.1 ms Turn−on Switching Loss IC = 8 A, VPN = 300 V, Tj = 25_C EON − 190 − mJ Turn−off Switching Loss EOFF − 90 − mJ Total Switching Loss ETOT − 280 − mJ Turn−on Switching Loss IC = 4 A, VPN = 300 V, Tj = 100_C EON − 100 − mJ Turn−off Switching Loss EOFF − 50 − mJ Total Switching Loss ETOT − 150 − mJ Diode Reverse Recovery Energy IC = 4 A, VPN = 300 V, Tj = 100_C, (di/dt set by internal driver) EREC − 25 − mJ Diode Reverse Recovery Time tRR − 140 − ns Reverse Bias Safe Operating Area IC = 16 A, VCE = 450 V RBSOA Full Square Short Circuit Safe Operating Area VCE = 400 V, Tj = 100_C SCSOA 4 − − ms Driver Section Quiescent VBS Supply Current VBS = 15 V, HIN = 0 V, per driver IQBS − 0.07 0.4 mA Quiescent VDD Supply Current VDD = 15 V, LIN = 0 V, VDD−VSS IQDD − 0.95 3.0 mA ON Threshold Voltage HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) − VSS VIN(ON) − − 2.5 V OFF Threshold Voltage VIN(OFF) 0.8 − − V Logic 1 Input Current VIN = +3.3 V IIN+ − 660 900 mA Logic 0 Input Current VIN = 0 V IIN− − − 3 mA Bootstrap ON Resistance IB = 1 mA RB − 500 − W FAULT Terminal Sink Current FAULT: ON / VFAULT = 0.1 V IoSD − 2 − mA Fault−Output Pulse Width FAULT−VSS tFOD 1.1 1.65 2.2 ms CFOD Threshold CFOD−VSS VCFOD − 8 − V Shut Down Threshold SD−VSS VSD+ − − 2.5 V VSD− 0.8 − − V ITRIP Trip Level ITRIP−VSS VITRIP 0.44 0.49 0.54 V ITRIP to Shutdown Propagation Delay tITRIP − 1.1 − ms ITRIP Blanking Time tITRIPBL 250 350 − ns High−Side Control Bias Voltage Under− Voltage Protection Reset Level UVBSR 10.3 11.1 11.9 V Detection Level UVBSD 10.1 10.9 11.7 V Hysteresis UVBSH − 0.2 − V Supply Voltage Under−Voltage Protection Reset Level UVDDR 10.3 11.1 11.7 V Detection Level UVDDD 10.1 10.9 11.5 V Hysteresis UVDDH − 0.2 − V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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