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WSF4060 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

номер детали WSF4060
подробное описание детали  N-Ch MOSFET
PDF  7 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF4060 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF4060 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4060 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4060 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4060 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4060 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4060 Datasheet HTML 6Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF4060 Datasheet HTML 7Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.043
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
---
7.2
9.0
m
Ω
VGS(th)
Gate Threshold Voltage
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-6.94
---
mV/℃
VDS=
32V , VGS=0V , TJ=25℃
---
---
2
IDSS
Drain-Source Leakage Current
VDS=
32V , VGS=0V , TJ=55℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
20A
---
33
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.4
2
Ω
Qg
Total Gate Charge (10V)
---
32
44
Qgs
Gate-Source Charge
---
3.8
---
Qgd
Gate-Drain Charge
VDS=
20V , VGS=10V , ID=40A
---
9.0
---
nC
Td(on)
Turn-On Delay Time
---
11
21
Tr
Rise Time
---
13
24
Td(off)
Turn-Off Delay Time
---
37
67
Tf
Fall Time
VDD=30V , VGEN=10V , RG=1Ω,
ID=1A
,RL=15Ω.
---
11
21
ns
Ciss
Input Capacitance
---
1460
---
Coss
Output Capacitance
---
180
---
Crss
Reverse Transfer Capacitance
VDS=
20V , VGS=0V , f=1MHz
---
146
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
40
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
100
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
20A , TJ=25℃
---
0.8
1.3
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec .
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
5mH,IAS=20A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is
60A.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
VGS=10V , ID=20A
N-Ch MOSFET
WSF4060
Page 2
www.winsok.tw
Dec.2014
RDS(ON)
Static Drain-Source On-Resistance
2
---
9.2
13
VGS=4.5V , ID=10A
mΩ



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