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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSF4060 датащи(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF4060 датащи(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 7 page  Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 48 A IDM Pulsed Drain Currenta 160 A EAS Single Pulse Avalanche Energ yb 100 mJ IAS Avalanche Current 60 A PD@Ta=25℃ Total Power Dissipation 3.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 50 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 2.5 ℃ /W BVDSS RDSON ID 40V 7.2mΩ 60A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power Tool Application Absolute Maximum Ratings Thermal Data TO-252 Pin Configuration Product Summery N-Ch MOSFET WSF4060 Page 1 www.winsok.tw Dec.2014 The WSF4060 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF4060 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Notes： * Avalanche single pulse test and avalanche period time tav≦100μs, duty<1% . ** Avalanche test condition: TJ=25°C, L=0.5mH, IAS=20A, VDD=30V, and VGS =10V. *** Current limited by bond wire. |
Аналогичный номер детали - WSF4060 |
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Аналогичное описание - WSF4060 |
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ссылки URL |
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