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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSC5N20 датащи(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSC5N20 датащи(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 200 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=30A --- 0.49 0.58 Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V △ VGS(th) VGS(th) Temperature Coefficient --- -6.16 --- mV/℃ IDSS Drain-Source Leakage Current VDS=2 00V , VGS=0V , TJ=25℃ --- --- 1 uA VDS= 160V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=± 30V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS= 30V , ID=2.5A --- 5.2 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω Qg Total Gate Charge (4.5V) VDS= 160V , VGS=5V , ID=5A --- 10.8 --- nC Qgs Gate-Source Charge --- 1.7 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) Turn-On Delay Time VDD=1 00V , VGS=10V , RG= 10Ω ID=5A, --- 7.33 --- ns Tr Rise Time --- 10.7 --- Td(off) Turn-Off Delay Time --- 18.2 --- Tf Fall Time --- 11.9 --- Ciss Input Capacitance VDS=1 00V , VGS=0V , f=1MHz --- 255 --- pF Coss Output Capacitance --- 30.2 --- Crss Reverse Transfer Capacitance --- 2.3 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD= 100V , L=0.1mH , IAS=10A 100 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 5 A ISM Pulsed Source Current 2,6 --- --- 20 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.4 V trr Reverse Recovery Time IF= 5A , dI/dt=100A/µs , TJ=25℃ --- 125.5 --- nS Qrr Reverse Recovery Charge --- 357 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD= 100V,VGS=10V,L=0.1mH,IAS=10A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics Diode Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) WSC5N20 N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 |
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