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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WSC5N20 датащи(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSC5N20 датащи(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page  Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Sou rce Voltage ± 30 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 5 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 1 3.24 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 1 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 0.5 A IDM Pulsed Drain Current 2 20 A EAS Single Pulse Avalanche Energy 3 125 mJ IAS Avalanche Current 10 A PD@TC=25℃ Total Power Dissipation 4 78 W PD@TA=25℃ Total Power Dissipation 4 2.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient (Steady State) 1 --- 62 ℃ /W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 2.8 ℃ /W BVDSS RDSON ID 200V 0.49Ω 5A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO -251 Pin Configuration Product Summery WSC5N20 N-Ch MOSFET Page 1 www.winsok.tw Dec.2014 The WSC5N20 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSC5N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. |
Аналогичный номер детали - WSC5N20 |
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Аналогичное описание - WSC5N20 |
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