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IRS2153DPBF датащи(PDF) 4 Page - International Rectifier |
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IRS2153DPBF датащи(HTML) 4 Page - International Rectifier |
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4 / 12 page ![]() 4 IRS2153D(S)PbF Electrical Characteristics VBIAS (VCC, VBS) = 14V, CT = 1 nF, VS=0V and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol Definition Min Typ Max Units Test Conditions Low Voltage Supply Characteristics VCCUV+ Rising VCC Undervoltage Lockout Threshold 10.2 10.8 11.5 VCCUV- Falling VCC Undervoltage Lockout Threshold 8.3 8.8 9.4 V VCCUVHYS VCC Undervoltage Lockout Hysteresis 1.6 2.0 2.4 IQCCUV Micropower Startup VCC Supply Current --- 130 170 µA VCC ≤ VCCUV- IQCC Quiescent VCC Supply Current --- 800 1000 µA ICC VCC Supply Current --- 1.8 --- mA RT = 36.9kΩ VCC CLAMP VCC Zener Clamp Voltage 14.4 15.4 16.8 V ICC = 5mA Floating Supply Characteristics IQBS Quiescent VBS Supply Current --- 60 80 µA VBSUV+ VBS Supply Undervoltage Positive Going Threshold 8.0 9.0 9.5 V VBSUV- VBS Supply Undervoltage negative Going Threshold 7.0 8.0 9.0 ILK Offset Supply Leakage Current --- --- 50 µA VB = VS = 600V Oscillator I/O Characteristics fOSC Oscillator Frequency 18.4 19.0 19.6 kHz RT = 36.5kΩ 88 93 100 RT = 7.15kΩ d RT Pin Duty Cycle --- 50 --- % fo < 100kHz ICT CT Pin Current --- 0.02 1.0 µA ICTUV UV-Mode CT Pin Pulldown Current 0.20 0.30 0.6 mA VCC = 7V VCT+ Upper CT Ramp Voltage Threshold --- 9.32 --- VCT- Lower CT Ramp Voltage Threshold --- 4.66 --- V VCTSD CT Voltage Shutdown Threshold 2.2 2.3 2.4 VRT+ High-Level RT Output Voltage, VCC - VRT --- 10 50 mV IRT = -100 µA --- 100 300 mV IRT = -1mA VRT- Low-Level RT Output Voltage --- 10 50 mV IRT = 100 µA --- 100 300 mV IRT = 1mA VRTUV UV-Mode RT Output Voltage --- 0 100 mV VCC ≤ VCCUV- VRTSD SD-Mode RT Output Voltage, VCC - VRT --- 10 50 mV IRT = -100 µA, VCT = 0V --- 100 300 mV IRT = -1mA, VCT = 0V |
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