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IRS2153DPBF датащи(PDF) 2 Page - International Rectifier |
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IRS2153DPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 12 page ![]() 2 IRS2153D(S)PbF Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Parameter Symbol Definition Min. Max. Units VB High Side Floating Supply Voltage -0.3 625 V VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 V V HO High-Side Floating Output Voltage VS – 0.3 VB + 0.3 V V LO Low-Side Output Voltage -0.3 VCC + 0.3 V IRT RT Pin Current -5 5 mA VRT RT Pin Voltage -0.3 VCC + 0.3 V VCT CT Pin Voltage -0.3 VCC + 0.3 V ICC Supply Current (Note 1) --- 20 mA IOMAX Maximum allowable current at LO and HO due to external power transistor Miller effect. -500 500 dVS/dt Allowable Offset Voltage Slew Rate -50 50 V/ns PD Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin DIP --- 1.0 W PD Maximum Power Dissipation @ TA ≤ +25ºC, 8-Pin SOIC --- 0.625 W RθJA Thermal Resistance, Junction to Ambient, 8-Pin DIP --- 85 ºC/W RθJA Thermal Resistance, Junction to Ambient, 8-Pin SOIC --- 128 ºC/W TJ Junction Temperature -55 150 TS Storage Temperature -55 150 ºC TL Lead Temperature (Soldering, 10 seconds) --- 300 Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.4V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. |
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