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PWD13F60TR датащи(PDF) 10 Page - STMicroelectronics

номер детали PWD13F60TR
подробное описание детали  High-density power driver -high voltage full bridge with integrated gate driver
PDF  26 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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PWD13F60TR датащи(HTML) 10 Page - STMicroelectronics

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Device characterization values
PWD13F60
10/26
DocID030865 Rev 2
5
Device characterization values
Table 7, Table 8 and electrical characteristics curves (from Figure 4 to Figure 12) contained
in this section represent typical values based on characterization and simulation results.
Table 7. Power MOSFET
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
MOSFET dynamic
Qg
Total gate charge
VGS = 10 V, TJ = 25 °C
VDS = 480 V, ID = 3 A
-26
-
nC
Source-drain diode
trr
Diode reverse recovery time
ISD = 3 A,
VS = 100 V,
di/dt = 100 A/µs, TJ = 25 °C
-93
-
ns
Qrr
Diode reverse recovery charge
-
376
-
nC
IRRM
Diode reverse recovery current
-
8.1
-
A
Table 8. Inductive load switching characteristics
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
t(on)(1)
Turn-on time
VS = 300 V,
VCC = VBO = 15 V,
IOUT = 3 A, TJ = 25 °C,
see Figure 3
-280
-
ns
tC(on)(2)
Crossover time (on)
-
75
-
ns
t(off)(1)
Turn-off time
-
360
-
ns
tC(off)(2)
Crossover time (off)
-
105
-
ns
Eon
Turn-on switching losses
-
115
-
µJ
Eoff
Turn-off switching losses
-
35
-
µJ
DT
Suggested minimum dead time
-
-
270
ns
1.
t(on) and t(off) include the propagation delay time of the internal driver.
2.
tC(on) and tC(off) are the switching times of the MOSFET itself under the internally given gate driving conditions.



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