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2EDF7275K датащи(PDF) 21 Page - Infineon Technologies AG

номер детали 2EDF7275K
подробное описание детали  Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate-driver
PDF  38 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

2EDF7275K датащи(HTML) 21 Page - Infineon Technologies AG

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Final datasheet
21
Rev.2.5
2020-03-17
EiceDRIVER™ 2EDi product family
2EDSx reinforced, 2EDFx functional isolated 4A/8A, 1A/2A gate drivers
Device characteristics
4.5.1.2
Functional isolation of devices in NB PG-DSO-16-11 package
The PG-DSO-16-11 package is available for 2EDF7175F, 2EDF9275Fand 2EDF7275F. The isolation related
parameters are shown in Table 21, Table 22 and Table 23
Table 19
Package characteristics (PG-TFLGA-13-1)
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
Typ.
Max.
Comparative Tracking Index of
package mold
CTI
400
–
600
V
according to DIN EN
60112 (VDE 0303-11)
Material group
–
–
II
–
–
according to IEC 60112
Table 20
Functional isolation channel-to-channel (PG-TFLGA-13-1)
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
Typ.
Max.
Functional isolation test
voltage
VCh2Ch-DC-
Test
650
–
–
VDC Impulse Test > 10 ms;
sample tested
Package creepage
CPG
–
1.0
–
mm Shortest distance over
surface, from output pin
Ch1-GND to output pin
Ch2-VDD
Table 21
Input-to-output isolation specification (NB PG-DSO-16-11)
Parameter
Symbol
Values
Unit Note or Test Condition
Min.
Typ.
Max.
Functional isolation test
voltage
VIO
1500
–
–
VDC Impulse test > 10 ms,
sample tested
Maximum isolation working
voltage
VIOWM
510
–
–
VRMS according to IEC 60664-1
(PD2; MG II)
Package clearance
CLR
–
4.0
–
mm Shortest distance over air,
from any input pin to any
output pin
Package creepage
CPG
–
4.0
–
mm Shortest distance over
surface, from any input
pin to any output pin
Common Mode Transient
Immunity
CMTI
150
–
–
V/ns according to DIN V VDE
V0884-10, static and
dynamic test
Capacitance input-to-output
CIO
–2–
pF
1)
1) parameter verified by design, not tested in production
Resistance input-to-output
RIO
–
>1000
–
MΩ 1)



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