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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS12N20CS датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS12N20CS датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Features 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available TSC - 1 - Rev. 1 05/2003 Description Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. Pin Configuration Internal Block Diagram Standard Application MicroSurf™ for High Frequency DC-DC Converters Patent Pending Ds D G S Drain-Source Voltage 20 Volt Current ID 12 Ampere Bottom: Bump Side PRELIMINARY DATA SHEET |
Аналогичный номер детали - TS12N20CS |
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Аналогичное описание - TS12N20CS |
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