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TS12N20CS датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TS12N20CS
подробное описание детали  Single N-Channel 4.5V Specified MicroSurf
PDF  2 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
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TS12N20CS датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Rev. 1
05/2003
Absolute Maximum Ratings TA =25°C unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
+12
V
Drain Current
– Continuous
ID
6A
– Pulsed
25
A
Power Dissipation (Steady State)
PD
2.2
W
Operating and Storage Junction Temperature Range
TJ, TSTG
- 55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
56
°C/ W
Thermal Resistance, Junction-to-Ball
RθJR
4.5
°C/ W
Thermal Resistance, Junction-to-Case
RθJC
0.6
°C/ W
Characteristics
Symbol Conditions
Min
Typ
Max Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID= 250µA
20
--
--
V
Gate-Body Leakage
IGGS
VGS=±12V, VDS=0V
--
--
±150
nA
Zero Gate Voltage Drain Current
IDSS
Tj=150°C, VDS=20V, VGS=0V
--
--
250
uA
Drain to Drain Sense Leakage
IDDS
Tj=150°C, VDS=20V, VGS=0V
--
--
250
uA
Static Drain-Source On-Resistance
RDS(on)
VGS= 4.5V, ID= 12A
--
3.9
--
mΩ
Drain Sense On-Resistance
RDSDS(on)
VGS= 4.5V, ID= 0.35A
--
137
--
mΩ
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID= 250uA
--
1.3
--
V
Total Gate Charge
Qg
VDS=20V, VGS= 4.5V, ID= 12A
--
19.8
--
nC
Gate Resistance
Rg
VDS=0V, f =1MHz
--
0.4
--
Ohms
Output Capacitance
Coss
VDS=20V, VGS=0V, f =1MHz
--
2.4
--
nF
Input Capacitance
Ciss
VDS=20V, VGS=0V, f =1MHz
--
320
--
pF
Reverse transfer capacitance
Crss
VDS=20V, VGS=0V, f =1MHz
--
TBD
--
pF
Reverse Recovery time
trr
If = 12A, di/dt =100A/us
--
--
40
ns
Source-Drain Diode
Tj=150°C
Forward On-Voltage
VSD
Is= 12A, VGS=0V
--
0.75
--
V
Source-Drain Diode
On-State Drain Current
ID(on)
VGS=4.5V, VDS=1V
25
--
--
A
Avalanche Energy UIS
Eas
Single Pulse 10us, VDS>BVDSS
2.5
--
--
mJ
TS12N20CS Electrical Specifications TA=25°C unless otherwise specified



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