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TC6321 датащи(PDF) 1 Page - Microchip Technology |
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TC6321 датащи(HTML) 1 Page - Microchip Technology |
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1 / 26 page ![]() TC6321 2017 Microchip Technology Inc. DS20005724A-page 1 Features • Integrated Gate-to-Source Resistor • Integrated Gate-to-Source Zener Diode • Low Threshold • Low On-Resistance • Low Input Capacitance • Fast Switching Speeds • Free from Secondary Breakdown • Low Input and Output Leakage • Independent, Electrically Isolated N- and P-Channels • 8-Lead Very Thin Plastic Dual Flat, No Lead, 6x 5mm VDFN Package Applications • High-Voltage Pulser •Amplifiers •Buffers • Piezoelectric Transducer Drivers • General-Purpose Line Drivers • Logic-Level Interfaces Package Types Description The TC6321 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in an 8-Lead VDFN package. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps, which are desired for high-voltage pulser applications. The TC6321 is a complimentary, high-speed, high-voltage, gate-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and the well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and with the high-input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. TC6321 6x 5 VDFN* * Includes Dual Exposed Thermal Pads (EP); see Table 3-1. DN DN DP DP SN GN SP GP 3 4 2 1 5 6 7 8 N- and P-Channel Enhancement-Mode MOSFET Pair |
Аналогичный номер детали - TC6321 |
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Аналогичное описание - TC6321 |
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