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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TC6321 датащи(PDF) 4 Page - Microchip Technology |
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TC6321 датащи(HTML) 4 Page - Microchip Technology |
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4 / 26 page  TC6321 DS20005724A-page 4 2017 Microchip Technology Inc. Diode Parameters Diode Forward Voltage Drop VSD —— 1.8 V VGS= 0V, ISD= 500 mA (Note 1) Reverse Recovery Time trr —100 — ns VGS = 0V, ISD = 500 mA diF/dt = 25 A/µ (Note 2) P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS Unless otherwise noted, TA = TJ = +25°C. Parameter Sym. Min. Typ. Max. Unit Condition DC Parameters (Note 1) Drain-to-Source Breakdown Voltage BVDSS –200 — — V VGS= 0V, ID= –2.0 mA Gate Threshold Voltage VGS(th) –1.0 — –2.4 V VGS =VDS, ID = –1.0 mA Change in VGS(th) with Temperature ∆VGS(th) —— 4.5 mV/ºC VGS =VDS, ID = –1.0 mA (Note 2) Gate-to-Source Shunt Resistor RGS 10 — 50 kΩ IGS = 100 μA Gate-to-Source Zener Voltage VZGS 13.2 — 25 V IGS = –2 mA Zero Gate Voltage Drain Current IDSS — — –10.0 μAVDS = 200V, VGS = 0V — — –1.0 mA VDS = 200V, VGS = 0V TJ = +125°C, (Note 2) On-State Drain Current ID(ON) –1.0 — — A VGS = –4.5V, VDS = –25V –2.0 — — VGS = –10V, VDS = –25V Static Drain-to-Source On-State Resistance RDS(ON) —— 10 VGS = –4.5V, ID = –150 mA —— 8.0 VGS = –10V, ID = –1.0A Change in RDS(ON) with Temperature ∆RDS(ON) —— 1.0 %/°C VGS = –25V, ID = –200 mA (Note 2) AC Parameters (Note 2) Forward Transconductance GFS 400 — — mmho VGS = –25V, ID = –500 mA Input Capacitance CISS —— 200 pF VGS = 0V VDS = –25V f = 1.0 MHz Common Source Output Capacitance COSS —— 55 Reverse Transfer Capacitance CRSS —— 30 Turn-On Delay Time td(ON) —— 10 ns VGS = –10V VDS = –25V ID = –1.0A RGEN = 25Ω Rise Time tr —— 15 Turn-Off Delay Time td(OFF) —— 20 Fall Time tf —— 15 Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS (CONTINUED) Unless otherwise noted, TA =TJ = +25°C. Parameters Sym. Min. Typ. Max. Units Conditions Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. |
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