P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (Note 1)

Drain-to-source Breakdown Voltage

–200

—

—

V

Gate Threshold Voltage

–1

—

–2.4

V

—

—

4.5

Gate Body Leakage

—

—

–100

nA

Zero-gate Voltage Drain Current

—

—

–10

µA

—

—

–1

mA

(Note 2)

On-state Drain Current

–0.25 –0.7

—

A

–0.75 –2.1

—

Static Drain-to-Source On-state

Resistance

—

10

15

Ω

—

8

12

Temperature

—

—

1.7

%/°C

(Note 2)

AC PARAMETER (Note 2)

Forward Transconductance

100

250

—

Input Capacitance

—

75

125

pF

f = 1 MHz

Common Source Output Capacitance

—

20

85

Reverse Transfer Capacitance

—

10

35

Turn-on Delay Time

—

—

10

ns

Rise Time

—

—

15

Turn-on Delay Time

—

—

20

Fall Time

—

—

15

DIODE PARAMETER

Diode Forward Voltage Drop

—

—

–1.8

V

Reverse Recovery Time

—

300

—

ns

Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

8-lead SOIC

—

101

—

°C/W

Note 1

 2017 Microchip Technology Inc.

DS20005708A-page 3

TC2320

Note 1: 1 oz., four-layer, 3” x 4” PCB