TC2320 datasheet(2/12 Pages) MICROCHIP

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TC2320

DS20005708A-page 2

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-source Voltage........................................................................................................................................ BVDSS

Drain-to-gate Voltage ........................................................................................................................................... BVDGS

Gate-to-source Voltage .......................................................................................................................................... ±20V

Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, TA = TJ = +25°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (Note 1)

Drain-to-source Breakdown Voltage

BVDSS

200

—

VGS = 0V, ID = 100 µA

Gate Threshold Voltage

VGS(th)

0.6

—

VGS = VDS, ID = 1 mA

Change in VGS(th) with Temperature

∆VGS(th)

—

–4.5

mV/°C VGS = VDS, ID = 1 mA (Note 2)

Gate Body Leakage Current

IGSS

—

100

VGS = ±20V, VDS = 0V

Zero-gate Voltage Drain Current

IDSS

—

µA

VGS = 0V, VDS = 100V

—

µA

VGS = 0V, VDS = Maximum rating

—

VGS = 0V, TA = 125°C,

VDS = 0.8 Maximum rating

(Note 2)

On-state Drain Current

ID(ON)

0.6

—

VGS = 4.5V, VDS = 25V

1.2

—

VGS = 10V, VDS = 25V

Static Drain-to-Source On-state



Resistance

RDS(ON)

—

Ω

VGS = 4.5V, ID = 150 mA

—

VGS = 10V, ID = 1A

Change in RDS(ON) with

Temperature

∆RDS(ON)

—

%/°C

VGS = 4.5V, ID = 150 mA (Note 2)

AC PARAMETER (Note 2)

Forward Transconductance

GFS

150

—

mmho VDS = 25V, ID = 200 mA

Input Capacitance

CISS

—

110

VGS = 0V,

VDS = 25V,

f = 1 MHz

Common Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-on Delay Time

td(ON)

—

VDD = 25V,

ID = 150 mA,

RGEN = 25Ω

Rise Time

—

Turn-off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.8

VGS = 0V, ISD = 200 mA (Note 1)

Reverse Recovery Time

trr

—

300

—

VGS = 0V, ISD = 200 mA (Note 2)

Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C.

Pulse test: 300 µs pulse, 2% duty cycle.

2: Specification is obtained by characterization and is not 100% tested.

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