IXFC26N50 datasheet(1/2 Pages) IXYS

номер детали	IXFC26N50

подробное описание детали	HiPerFET MOSFETs ISOPLUS220

PDF	2 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

26N50

23

A

24N50

21

A

I

DM

T

C

= 25

°C, Pulse width limited by T

JM

26N50

92

A

24N50

84

A

I

AR

T

C

= 25

°C

26N50

26

A

24N50

24

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

230

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 minute leads-to-tab

2500

V~

Weight

3

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250uA

500

V

GS(th)

V

DS = VGS, ID = 4mA

2

4

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = 0.8 VDSS

T

J

= 25

°C

200

µA

V

GS = 0 V

T

J

= 125

°C

1

mA

R

DS(on)

V

GS = 10 V, ID = IT

26N50

0.20

Ω

Notes 1 & 2

24N50

0.23

Ω

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l Low drain to tab capacitance(<35pF)

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Unclamped Inductive Switching (UIS)

rated

l FastintrinsicRectifier

Applications

l DC-DC converters

l Batterychargers

l Switched-mode and resonant-mode

power supplies

l DC choppers

l AC motor control

Advantages

l Easy assembly: no screws, or isolation

foils required

l Space savings

l High power density

l Lowcollectorcapacitancetoground

(low EMI)

G = Gate

D = Drain

S = Source

* Patent pending

Isolated back surface*

V

DSS

I

D25

R

DS(on)

IXFC 26N50

500 V

23 A

0.20

Ω

IXFC 24N50

500 V

21 A

0.23

Ω

t

rr ≤

≤≤≤≤ 250 ns

HiPerFETTM MOSFETs

ISOPLUS220TM

Electrically Isolated Back Surface

N-Channel Enhancement Mode

High dV/dt,

Low t

rr, HDMOS

TM Family

ISOPLUS 220TM

98755 (10/00)

S

G

D

ADVANCE TECHNICAL INFORMATION

Аналогичный номер детали - IXFC26N50

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXFC26N50	323Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFC26N50P	180Kb / 5P	PolarHV HiPerFET Power MOSFET ISOPLUS 220
Inchange Semiconductor ...	IXFC26N50P	323Kb / 2P	isc N-Channel MOSFET Transistor

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